? semiconductor components industries, llc, 1999 february, 2000 rev. 2 1 publication order number: mcr218fp/d
preferred device
reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ? glass passivated junctions with center gate fire for greater parameter uniformity and stability ? small, rugged, thermowatt constructed for low thermal resistance, high heat dissipation and durability ? blocking voltage to 800 volts ? 80 a surge current capability ? insulated package simplifies mounting ? indicates ul registered e file #e69369 ? device marking: logo, device type, e.g., mcr2186, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to +125 c, sine wave 50 to 60 hz, gate open) mcr2186fp mcr21810fp v drm, v rrm 400 800 volts on-state rms current (t c = +70 c) (2) (180 conduction angles) i t(rms) 8.0 amps peak nonrepetitive surge current (1/2 cycle, sine wave 60 hz, t j = 125 c) i tsm 100 amps circuit fusing (t = 8.3 ms) i 2 t 26 a 2 s forward peak gate power (t c = +70 c, pulse width 1.0 m s) p gm 5.0 watts forward average gate power (t c = +70 c, t = 8.3 ms) p g(av) 0.5 watt forward peak gate current (t c = +70 c, pulse width 1.0 m s) i gm 2.0 amps rms isolation voltage (t a = 25 c, relative humidity 20%) () v (iso) 1500 volts operating junction temperature t j 40 to +125 c storage temperature range t stg 40 to +150 c (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) the case temperature reference point for all t c measurements is a point on the center lead of the package as close as possible to the plastic body. isolated scrs 8 amperes rms 400 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mcr2186fp isolated to220fp 500/box http://onsemi.com mcr21810fp isolated to220fp 500/box isolated to220 full pack case 221c style 2 1 2 3 pin assignment 1 2 3 anode gate cathode k g a ()
mcr2186fp, mcr21810fp http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 2 c/w thermal resistance, case to sink r q cs 2.2 (typ) c/w thermal resistance, junction to ambient r q ja 60 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted.) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v d = rated v drm , gate open) t j = 25 c t j = 125 c i drm, i rrm e e e e 10 2 m a ma on characteristics peak forward onstate voltage (1) (i tm = 16 a peak) v tm e 1 1.8 volts gate tri gger current (continuous dc) (v ak = 12 vdc, r l = 100 ohms) i gt e 10 25 ma gate tri gger v oltage (continuous dc) (v ak = 12 vdc, r l = 100 ohms) v gt e e 1.5 volts gate non-tri gger v oltage (v ak = 12 vdc, r l = 100 ohms, t j = 125 c) v gd 0.2 e e volts holding current (v ak = 12 vdc, initiating current = 200 ma, gate open) i h e 16 30 ma turn-on time (i tm = 8 a, i gt = 40 madc) t gt e 1.5 e m s turn-off time (v d = rated v drm , i tm = 8 a, i r = 8 a) t j = 25 c t j = 125 c t q e e 15 35 e e m s dynamic characteristics critical rate-of-rise of off-state voltage (gate open, v d = rated v drm , exponential waveform) dv/dt e 100 e v/ m s (1) pulse test: pulse width = 1 ms, duty cycle 2%.
mcr2186fp, mcr21810fp http://onsemi.com 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) 8 7 6 5 4 3 2 1 12 9 6 3 i t(av) , avg. on-state current (amps) 0 0 60 90 120 180 dc 75 85 95 105 115 8 7 6 5 4 3 2 1 0 125 a = conduction angle 90 60 120 dc a i t(av) , average on-state forward current (amps) a = conduction angle figure 1. current derating figure 2. on-state power dissipation 15 a p , average on-state power dissipation (av) (watts) t , maximum allowable case temperature ( c) c a = 30 180 a = 30
mcr2186fp, mcr21810fp http://onsemi.com 4 1 0.02 0.03 0.05 0.07 0.1 100 0.2 0.3 0.5 0.7 0.2 0.3 0.5 1 2 1.2 0.1 z q jc(t) = r q jc ? r(t) 1 cycle 1 60 surge is preceded and followed by rated current t c = 85 c f = 60 hz number of cycles 65 70 75 80 20 2346810 0.1 0.4 0.01 t, time (ms) 35 55 0.2 0.3 0.5 0.7 7 5 1 2 10 50 3 20 30 70 v f , instantaneous on-state voltage (volts) 2.8 4.4 3.6 5.2 6 2 30 50 100 200 300 500 2.0 k 10 3.0 k 5.0 k 10 k 1.0 k i , peak surge current (amp) tsm r(t), transient thermal resistance (normalized) f i , instantaneous on-state forward current (amp) figure 3. maximum on-state characteristics figure 4. maximum non-repetitive surge current figure 5. thermal response t j = 25 c 125 c
mcr2186fp, mcr21810fp http://onsemi.com 5 2 60 figure 6. typical gate trigger current versus temperature t j , junction temperature ( c) v d = 12 v 60 figure 7. typical gate trigger voltage versus temperature v d = 12 v figure 8. typical holding current versus temperature 60 v d = 12 v 140 120 40 100 80 60 020 20 2 0.4 0.8 1.2 1.6 0 40 140 120 40 100 80 60 020 20 2 0.4 0.4 0 1.6 1.2 0.8 1.2 1.6 40 140 120 40 0 0.8 100 80 60 40 0 20 20 t j , junction temperature ( c) t j , junction temperature ( c) i , gate trigger current (normalized) gt v , gate trigger voltage (normalized) gt i , holding current (normalized) h
mcr2186fp, mcr21810fp http://onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. lead dimensions uncontrolled within dimension z. y b t q p a k h z g l f d 3 pl m b m 0.25 (0.010) y e n s j r c seating plane dim min max min max millimeters inches a 0.680 0.700 17.28 17.78 b 0.388 0.408 9.86 10.36 c 0.175 0.195 4.45 4.95 d 0.025 0.040 0.64 1.01 e 0.340 0.355 8.64 9.01 f 0.140 0.150 3.56 3.81 g 0.100 bsc 2.54 bsc h 0.110 0.155 2.80 3.93 j 0.018 0.028 0.46 0.71 k 0.500 0.550 12.70 13.97 l 0.045 0.070 1.15 1.77 n 0.049 1.25 p 0.270 0.290 6.86 7.36 q 0.480 0.500 12.20 12.70 r 0.090 0.120 2.29 3.04 s 0.105 0.115 2.67 2.92 z 0.070 0.090 1.78 2.28 123 style 2: pin 1. cathode 2. anode 3. gate isolated to220 full pack case 221c02 issue c
mcr2186fp, mcr21810fp http://onsemi.com 7 notes
mcr2186fp, mcr21810fp http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent r ights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1418549 phone : 81357402745 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mcr218fp/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (mf 1:00pm to 5:00pm munich time) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (mf 1:00pm to 5:00pm toulouse time) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (mf 12:00pm to 5:00pm uk time) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, england, ireland
|
